Dry etching provides precision, anisotropy, and high aspect ratio control that are essential for advanced MEMS, photonic, and microfluidic devices.

At B-Micron, we offer a comprehensive suite of dry etching capabilities, including standard RIE, ICP, and DRIE (Deep Reactive Ion Etching), enabling both fine-resolution patterning and ultra-deep structures.

• Non-metals / Inorganics: Silicon (Si), silicon dioxide (SiO₂), silicon nitride (SiNₓ), polysilicon (Poly-Si), amorphous silicon (a-Si), indium tin oxide (ITO), quartz, titanium dioxide (TiO₂), gallium nitride (GaN), tantalum nitride (TaN), and others.

• Applications: photonic waveguides, resonators, MEMS sensors, and microfluidic structures.

• Metals: Chromium (Cr), titanium (Ti), aluminum (Al), gold (Au), and other conductive materials.

• Applications: RF components, reflective coatings, interconnects, and electrodes.

• Polymers: Polyimide, parylene, ALD parylene, and other polymer films.

• Applications: flexible membranes, biomedical microdevices, and packaging structures.

• Deep Reactive Ion Etching (DRIE): DRIE enables ultra-high aspect ratio etching of silicon, making it possible to fabricate deep trenches, through-silicon vias (TSVs), and release structures. This is critical for MEMS actuators, gyroscopes, micro-mirrors, and advanced microfluidic devices.

Because we do not charge upfront setup fees, clients can access these advanced processes without initial financial barriers, making B-Micron a partner of choice for both startups and established enterprises.

Applications: waveguides and photonic devices, MEMS accelerometers/gyros, through-silicon interconnects, microfluidic channels, RF filters, biomedical microchips, and micro-actuators.